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ManufacturerONSEMI
Manufacturer Part NoFFSH3065B-F085
Newark Part No.84AC6678
Product RangeEliteSiC Series
Technical Datasheet
247 In Stock
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Quantity | Price |
---|---|
1+ | $12.490 |
10+ | $11.750 |
25+ | $10.880 |
50+ | $10.010 |
100+ | $9.700 |
250+ | $9.370 |
Price for:Each
Minimum: 1
Multiple: 1
$12.49
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFFSH3065B-F085
Newark Part No.84AC6678
Product RangeEliteSiC Series
Technical Datasheet
Product RangeEliteSiC Series
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage650V
Average Forward Current30A
Total Capacitive Charge73nC
Diode Case StyleTO-247
No. of Pins2 Pin
Operating Temperature Max175°C
Diode MountingThrough Hole
QualificationAEC-Q101
SVHCLead (27-Jun-2024)
Product Overview
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
- Max Junction Temperature 175°C
- AEC−Q101 qualified
- Avalanche Rated 200 mJ
- No Reverse Recovery/No Forward Recovery
- Ease of Paralleling
- High Surge Current Capacity
- Positive Temperature Coefficient
Technical Specifications
Product Range
EliteSiC Series
Repetitive Peak Reverse Voltage
650V
Total Capacitive Charge
73nC
No. of Pins
2 Pin
Diode Mounting
Through Hole
SVHC
Lead (27-Jun-2024)
Diode Configuration
Single
Average Forward Current
30A
Diode Case Style
TO-247
Operating Temperature Max
175°C
Qualification
AEC-Q101
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate