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FFSP1065A
Silicon Carbide Schottky Diode, EliteSiC Series, Single, 650 V, 10 A, 34 nC, TO-220
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ManufacturerONSEMI
Manufacturer Part NoFFSP1065A
Newark Part No.48AC1069
Product RangeEliteSiC Series
Technical Datasheet
125 In Stock
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| 100+ | $2.150 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFFSP1065A
Newark Part No.48AC1069
Product RangeEliteSiC Series
Technical Datasheet
Product RangeEliteSiC Series
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage650V
Average Forward Current10A
Total Capacitive Charge34nC
Diode Case StyleTO-220
No. of Pins2 Pin
Operating Temperature Max175°C
Diode MountingThrough Hole
Qualification-
SVHCLead
Product Overview
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
- Max Junction Temperature 175°C
- AEC−Q101 qualified
- Avalanche Rated 200 mJ
- No Reverse Recovery/No Forward Recovery
- Ease of Paralleling
- High Surge Current Capacity
- Positive Temperature Coefficient
Technical Specifications
Product Range
EliteSiC Series
Repetitive Peak Reverse Voltage
650V
Total Capacitive Charge
34nC
No. of Pins
2 Pin
Diode Mounting
Through Hole
SVHC
Lead
Diode Configuration
Single
Average Forward Current
10A
Diode Case Style
TO-220
Operating Temperature Max
175°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability