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FQP11N40C
Power MOSFET, N Channel, 400 V, 10.5 A, 0.43 ohm, TO-220AB, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $1.880 |
| 10+ | $1.820 |
| 100+ | $1.770 |
| 500+ | $1.670 |
| 1000+ | $1.650 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQP11N40C
Newark Part No.31Y1543
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds400V
Continuous Drain Current Id10.5A
On Resistance Rds(on)0.43ohm
Drain Source On State Resistance0.43ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Power Dissipation Pd135W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation135W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The FQP11N40C is a QFET® N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- 100% avalanche tested
- 28nC typical low gate charge
- 85pF typical low Crss
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
400V
On Resistance Rds(on)
0.43ohm
Transistor Case Style
TO-220AB
Power Dissipation Pd
135W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
10.5A
Drain Source On State Resistance
0.43ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
135W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability