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MJ11016G
Darlington Transistor, Darlington, NPN, 120 V, 200 W, 30 A, TO-3, 2 Pins
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| Quantity | Price |
|---|---|
| 1+ | $6.770 |
| 10+ | $4.330 |
| 25+ | $4.330 |
| 50+ | $4.320 |
| 100+ | $3.600 |
| 300+ | $3.020 |
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$6.77
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJ11016G
Newark Part No.26K4505
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo120V
Collector Emitter Voltage Max120V
Transition Frequency-
Continuous Collector Current30A
Power Dissipation Pd200W
DC Collector Current30A
Power Dissipation200W
RF Transistor CaseTO-3
Transistor MountingThrough Hole
No. of Pins2Pins
Transistor Case StyleTO-204AA
DC Current Gain hFE200hFE
DC Current Gain hFE Min1000hFE
Operating Temperature Max200°C
Qualification-
Product Range-
SVHCLead
Product Overview
The MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emitter shunt resistor.
- High DC current gain
- Collector-base voltage (Vcbo = 120V)
- Emitter-base voltage (Vcbo = 5V)
Applications
Industrial
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
120V
Continuous Collector Current
30A
DC Collector Current
30A
RF Transistor Case
TO-3
No. of Pins
2Pins
DC Current Gain hFE
200hFE
Operating Temperature Max
200°C
Product Range
-
Collector Emitter Voltage V(br)ceo
120V
Transition Frequency
-
Power Dissipation Pd
200W
Power Dissipation
200W
Transistor Mounting
Through Hole
Transistor Case Style
TO-204AA
DC Current Gain hFE Min
1000hFE
Qualification
-
SVHC
Lead
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability