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MMBFJ309LT1G
JFET Transistor, Junction Field Effect, -25 V, 30 mA, -4 V, SOT-23, 3 Pin, 150 °C
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ManufacturerONSEMI
Manufacturer Part NoMMBFJ309LT1GCopy
Manufacturer Standard Lead Time47 weeks
Newark Part No.
Re-Reel45J1519RL
Cut Tape45J1519
Your Part Number
964 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 1 | $0.298 | $0.30 |
| Total Price | $0.30 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.298 |
| 50+ | $0.196 |
| 100+ | $0.172 |
| 250+ | $0.161 |
| 500+ | $0.155 |
| 1000+ | $0.149 |
| 2500+ | $0.146 |
| 5000+ | $0.143 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBFJ309LT1GCopy
Manufacturer Standard Lead Time47 weeks
Newark Part No.
Re-Reel45J1519RL
Cut Tape45J1519
Technical Datasheet
Product Overview
The MMBFJ309LT1G is a N-channel JFET designed for high frequency amplifiers and oscillators. The device offers interchangeable drain and source, space saving surface-mount package. The Low RDS (ON) provides higher efficiency and extends battery life.
- 25VDC Drain-source voltage
- 25VDC Gate-source voltage
- 10mA Gate current
Applications
Industrial, Power Management
Technical Docs (2)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability