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MUN5114DW1T1G
Bipolar Pre-Biased / Digital Transistor, Dual PNP, 50 V, 100 mA, 10 kohm, 47 kohm
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ManufacturerONSEMI
Manufacturer Part NoMUN5114DW1T1GCopy
Manufacturer Standard Lead Time11 weeks
Newark Part No.09R9565
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 11 week(s)
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| Quantity | Price |
|---|---|
| 9000+ | $0.054 |
| 18000+ | $0.053 |
| 36000+ | $0.052 |
Price for:Each (Supplied on Cut Tape)
Minimum: 9000
Multiple: 9000
$486.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoMUN5114DW1T1GCopy
Manufacturer Standard Lead Time11 weeks
Newark Part No.09R9565
Technical Datasheet
Transistor PolarityDual PNP
Collector Emitter Voltage Max NPN-
Collector Emitter Voltage Max PNP50V
Continuous Collector Current100mA
Transistor Case StyleSOT-363
Power Dissipation385mW
Operating Temperature Max150°C
DC Current Gain hFE Min80hFE
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
Dual PNP
Collector Emitter Voltage Max PNP
50V
Transistor Case Style
SOT-363
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Collector Emitter Voltage Max NPN
-
Continuous Collector Current
100mA
Power Dissipation
385mW
DC Current Gain hFE Min
80hFE
Qualification
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate