Print Page
NTJD4105CT2G
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 630 mA, 630 mA, 0.29 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTJD4105CT2GCopy
Manufacturer Standard Lead Time20 weeks
Newark Part No.
Re-Reel13AC3885RL
Cut Tape13AC3885
Your Part Number
4,723 In Stock
Need more?
Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.459 | $0.46 |
| Total Price | $0.46 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.459 |
| 50+ | $0.292 |
| 100+ | $0.192 |
| 250+ | $0.171 |
| 500+ | $0.148 |
| 1000+ | $0.135 |
| 2500+ | $0.131 |
| 5000+ | $0.129 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTJD4105CT2GCopy
Manufacturer Standard Lead Time20 weeks
Newark Part No.
Re-Reel13AC3885RL
Cut Tape13AC3885
Technical Datasheet
Channel TypeComplementary N and P Channel
Continuous Drain Current Id630mA
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel630mA
Continuous Drain Current Id P Channel630mA
Drain Source On State Resistance N Channel0.29ohm
Drain Source On State Resistance P Channel0.29ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel270mW
Power Dissipation P Channel270mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
630mA
Drain Source On State Resistance P Channel
0.29ohm
No. of Pins
6Pins
Power Dissipation P Channel
270mW
Product Range
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
630mA
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
630mA
Drain Source On State Resistance N Channel
0.29ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
270mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Alternatives for NTJD4105CT2G
1 Product Found
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate