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NTMFS3D6N10MCLT1G
MOSFET, N-CH, 100V, 131A, DFN
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTMFS3D6N10MCLT1GCopy
Manufacturer Standard Lead Time20 weeks
Newark Part No.82AH7661
Your Part Number
Available to Order
| Quantity | Price |
|---|---|
| 1+ | $4.220 |
| 10+ | $2.740 |
| 25+ | $2.530 |
| 50+ | $2.310 |
| 100+ | $2.110 |
| 250+ | $1.930 |
| 500+ | $1.760 |
| 1000+ | $1.630 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$4.22
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMFS3D6N10MCLT1GCopy
Manufacturer Standard Lead Time20 weeks
Newark Part No.82AH7661
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id131A
On Resistance Rds(on)0.003ohm
Drain Source On State Resistance3000µohm
Transistor Case StyleDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation Pd136W
Power Dissipation136W
No. of Pins5Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.003ohm
Transistor Case Style
DFN
Rds(on) Test Voltage
10V
Power Dissipation Pd
136W
No. of Pins
5Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
131A
Drain Source On State Resistance
3000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
Power Dissipation
136W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate