Print Page
NTZD3155CT1G
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 540 mA, 540 mA, 0.55 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTZD3155CT1GCopy
Manufacturer Standard Lead Time21 weeks
Newark Part No.
Re-Reel10N9592
Cut Tape10N9592
Your Part Number
157,378 In Stock
Need more?
1378 US Stock delivery in 2-4 Business Days Order before 8pm EST Standard Shipping
156000 UK Stock available for delivery in 4-6 Business Days
Order before 6pm EST Standard Shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.388 | $0.39 |
| Total Price | $0.39 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.388 |
| 25+ | $0.317 |
| 100+ | $0.204 |
| 500+ | $0.169 |
| 1000+ | $0.133 |
| 2500+ | $0.127 |
| 10000+ | $0.121 |
| 25000+ | $0.119 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTZD3155CT1GCopy
Manufacturer Standard Lead Time21 weeks
Newark Part No.
Re-Reel10N9592
Cut Tape10N9592
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id540mA
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel540mA
Continuous Drain Current Id P Channel540mA
Drain Source On State Resistance N Channel0.55ohm
Drain Source On State Resistance P Channel0.4ohm
Transistor Case StyleSOT-563
No. of Pins6Pins
Power Dissipation N Channel250mW
Power Dissipation P Channel250mW
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The NTZD3155CT1G is a N/P-channel complementary Small Signal MOSFET designed for cell phones, MP3s, digital cameras and PDAs. It is suitable for DC-to-DC conversion circuits, load/power switching with level shift, single or dual cell Li-Ion battery operated systems and high speed circuit applications.
- Leading Trench technology for low RDS (ON) performance
- High efficiency system performance
- Low threshold voltage
- ESD protected gate
- Small footprint
Applications
Industrial, Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Continuous Drain Current Id
540mA
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
540mA
Drain Source On State Resistance P Channel
0.4ohm
No. of Pins
6Pins
Power Dissipation P Channel
250mW
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
540mA
Drain Source On State Resistance N Channel
0.55ohm
Transistor Case Style
SOT-563
Power Dissipation N Channel
250mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Alternatives for NTZD3155CT1G
2 Products Found
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate