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NVHL080N120SC1A
Silicon Carbide MOSFET, Single, N Channel, 31 A, 1.2 kV, 0.08 ohm, TO-247
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ManufacturerONSEMI
Manufacturer Part NoNVHL080N120SC1ACopy
Newark Part No.82AH7673
Product RangeEliteSiC Series
Your Part Number
391 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $7.430 |
Price for:Each
Minimum: 1
Multiple: 1
$7.43
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVHL080N120SC1ACopy
Newark Part No.82AH7673
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id31A
On Resistance Rds(on)0.08ohm
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.08ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage20V
Power Dissipation Pd178W
Gate Source Threshold Voltage Max2.7V
Power Dissipation178W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
On Resistance Rds(on)
0.08ohm
Drain Source On State Resistance
0.08ohm
No. of Pins
3Pins
Power Dissipation Pd
178W
Power Dissipation
178W
Product Range
EliteSiC Series
SVHC
Lead
Transistor Polarity
N Channel
Continuous Drain Current Id
31A
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
20V
Gate Source Threshold Voltage Max
2.7V
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate