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NVMTS001N06CTXG
MOSFET, AEC-Q101, N-CH, 60V, 376A, DFNW
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNVMTS001N06CTXGCopy
Manufacturer Standard Lead Time20 weeks
Newark Part No.03AJ2437
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 20 week(s)
| Quantity | Price |
|---|---|
| 1+ | $10.520 |
| 10+ | $7.190 |
| 25+ | $6.550 |
| 50+ | $5.930 |
| 100+ | $5.300 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$10.52
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNVMTS001N06CTXGCopy
Manufacturer Standard Lead Time20 weeks
Newark Part No.03AJ2437
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id376A
Drain Source On State Resistance910µohm
On Resistance Rds(on)770µohm
Transistor Case StyleDFNW
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation244W
Power Dissipation Pd244W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCLead (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
910µohm
Transistor Case Style
DFNW
Rds(on) Test Voltage
10V
Power Dissipation
244W
No. of Pins
8Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
Lead (25-Jun-2025)
Channel Type
N Channel
Continuous Drain Current Id
376A
On Resistance Rds(on)
770µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
244W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate