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RS1E321GNTB1
MOSFET, N-CH, 30V, 80A, 150DEG C, 34W
Image is for illustrative purposes only. Please refer to product description.
ManufacturerROHM
Manufacturer Part NoRS1E321GNTB1Copy
Manufacturer Standard Lead Time23 weeks
Newark Part No.29AK5181
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 23 week(s)
| Quantity | Price |
|---|---|
| 1+ | $3.550 |
| 10+ | $2.280 |
| 25+ | $2.050 |
| 50+ | $1.830 |
| 100+ | $1.600 |
| 250+ | $1.460 |
| 500+ | $1.300 |
| 1000+ | $1.200 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$3.55
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerROHM
Manufacturer Part NoRS1E321GNTB1Copy
Manufacturer Standard Lead Time23 weeks
Newark Part No.29AK5181
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id80A
Drain Source On State Resistance2100µohm
On Resistance Rds(on)0.0014ohm
Transistor Case StyleHSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation Pd34W
Power Dissipation34W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (23-Jan-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
2100µohm
Transistor Case Style
HSOP
Rds(on) Test Voltage
10V
Power Dissipation Pd
34W
No. of Pins
8Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
80A
On Resistance Rds(on)
0.0014ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
Power Dissipation
34W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (23-Jan-2024)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate