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| Quantity | Price |
|---|---|
| 1+ | $2.290 |
| 10+ | $1.900 |
| 100+ | $1.230 |
| 500+ | $1.020 |
| 1000+ | $0.944 |
| 2500+ | $0.888 |
| 10000+ | $0.835 |
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Multiple: 1
$2.29
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoBDW93CFP
Newark Part No.25M7706
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max100V
Collector Emitter Voltage V(br)ceo100V
Transition Frequency-
Continuous Collector Current12A
Power Dissipation Pd33W
Power Dissipation33W
DC Collector Current12A
RF Transistor CaseTO-220FP
No. of Pins3Pins
DC Current Gain hFE1000hFE
Transistor MountingThrough Hole
DC Current Gain hFE Min1000hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BDW93CFP is a NPN complementary silicon epitaxial-base Power Transistor with monolithic Darlington configuration mounted in a fully moulded insulated package. It is intended for use in power linear and switching applications.
- Integrated anti-parallel collector-emitter diode
- PNP complementary type is BDW94CFP
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
100V
Continuous Collector Current
12A
Power Dissipation
33W
RF Transistor Case
TO-220FP
DC Current Gain hFE
1000hFE
DC Current Gain hFE Min
1000hFE
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Collector Emitter Voltage Max
100V
Transition Frequency
-
Power Dissipation Pd
33W
DC Collector Current
12A
No. of Pins
3Pins
Transistor Mounting
Through Hole
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability