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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoBDX53B
Newark Part No.25M7710
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max80V
Collector Emitter Voltage V(br)ceo80V
Transition Frequency-
Power Dissipation Pd60W
Continuous Collector Current8A
DC Collector Current8A
Power Dissipation60W
RF Transistor CaseTO-220
No. of Pins3Pins
Transistor Case StyleTO-220
DC Current Gain hFE750hFE
Transistor MountingThrough Hole
Operating Temperature Max150°C
DC Current Gain hFE Min750hFE
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BDX53B is a NPN complementary power Darlington Transistor manufactured in Planar Base Island technology. It offers monolithic Darlington configuration with integrated anti-parallel collector-emitter diode.
- Good hFE linearity
- High fT frequency
Applications
Industrial, Power Management, Audio
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation Pd
60W
DC Collector Current
8A
RF Transistor Case
TO-220
Transistor Case Style
TO-220
Transistor Mounting
Through Hole
DC Current Gain hFE Min
750hFE
Qualification
-
Collector Emitter Voltage Max
80V
Transition Frequency
-
Continuous Collector Current
8A
Power Dissipation
60W
No. of Pins
3Pins
DC Current Gain hFE
750hFE
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for BDX53B
1 Product Found
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate