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PD55025S-E
RF FET, N-CH, 40V, 7A, POWERSO-10RF
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoPD55025S-E
Newark Part No.07AH6876
Technical Datasheet
77 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $26.510 |
| 5+ | $23.990 |
| 10+ | $21.470 |
| 25+ | $20.600 |
Price for:Each
Minimum: 1
Multiple: 1
$26.51
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoPD55025S-E
Newark Part No.07AH6876
Technical Datasheet
Drain Source Voltage Vds40V
Continuous Drain Current Id7A
Power Dissipation79W
Operating Frequency Min-
Power Dissipation Pd79W
Operating Frequency Max1GHz
Transistor Case StylePowerSO-10RF
RF Transistor CasePowerSO-10RF
No. of Pins-
Operating Temperature Max165°C
Channel TypeN Channel
Transistor MountingFlange
Product Range-
MSLMSL 3 - 168 hours
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
40V
Power Dissipation
79W
Power Dissipation Pd
79W
Transistor Case Style
PowerSO-10RF
No. of Pins
-
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Continuous Drain Current Id
7A
Operating Frequency Min
-
Operating Frequency Max
1GHz
RF Transistor Case
PowerSO-10RF
Operating Temperature Max
165°C
Transistor Mounting
Flange
MSL
MSL 3 - 168 hours
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability