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STB40N60M2
Power MOSFET, N Channel, 600 V, 34 A, 0.078 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB40N60M2
Newark Part No.45AC7526
Product RangeMDmesh M2
Technical Datasheet
Packaging Options
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
| Quantity | Price |
|---|---|
| 1+ | $7.310 |
| 10+ | $5.340 |
| 25+ | $4.930 |
| 50+ | $4.540 |
| 100+ | $4.130 |
| 250+ | $4.070 |
| 500+ | $4.020 |
| 1000+ | $3.530 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$7.31
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB40N60M2
Newark Part No.45AC7526
Product RangeMDmesh M2
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id34A
On Resistance Rds(on)0.078ohm
Drain Source On State Resistance0.078ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd250W
Gate Source Threshold Voltage Max3V
Power Dissipation250W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMDmesh M2
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.078ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
MDmesh M2
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
34A
Drain Source On State Resistance
0.078ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
250W
Power Dissipation
250W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for STB40N60M2
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate