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STD19N3LLH6AG
Power MOSFET, N Channel, 30 V, 10 A, 0.025 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD19N3LLH6AG
Newark Part No.45AC7535
Product RangeSTripFET H6
Technical Datasheet
546 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $0.543 |
| 10+ | $0.540 |
| 25+ | $0.539 |
| 50+ | $0.495 |
| 100+ | $0.495 |
| 250+ | $0.495 |
| 500+ | $0.457 |
| 1000+ | $0.457 |
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Multiple: 1
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD19N3LLH6AG
Newark Part No.45AC7535
Product RangeSTripFET H6
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id10A
Drain Source On State Resistance0.025ohm
On Resistance Rds(on)0.025ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd30W
Gate Source Threshold Voltage Max2.5V
Power Dissipation30W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeSTripFET H6
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (17-Dec-2015)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.025ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
STripFET H6
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (17-Dec-2015)
Transistor Polarity
N Channel
Continuous Drain Current Id
10A
On Resistance Rds(on)
0.025ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
30W
Power Dissipation
30W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate