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STD3NK90ZT4
MOSFET, N CH, 900V, 3A, DPAK
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD3NK90ZT4Copy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Re-Reel33R1156RL
Cut Tape33R1156
Your Part Number
4 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $3.280 | $3.28 |
| Total Price | $3.28 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $3.280 |
| 50+ | $1.800 |
| 100+ | $1.530 |
| 250+ | $1.400 |
| 500+ | $1.260 |
| 1000+ | $1.200 |
| 2500+ | $1.180 |
| 5000+ | $1.140 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD3NK90ZT4Copy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Re-Reel33R1156RL
Cut Tape33R1156
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds900V
Continuous Drain Current Id1.5A
Drain Source On State Resistance4.1ohm
On Resistance Rds(on)4.1ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd90W
Gate Source Threshold Voltage Max3.75V
Power Dissipation90W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STD3NK90ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.
- 100% Avalanche tested
- Very low intrinsic capacitance
- Very good manufacturing repeatability
- Extremely high dV/dt capability
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.5A
On Resistance Rds(on)
4.1ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
90W
Power Dissipation
90W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
900V
Drain Source On State Resistance
4.1ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate