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STP28N60M2
MOSFET, N-CH, 600V, 22A, TO-220AB
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP28N60M2
Newark Part No.45AC7714
Product RangeMDmesh M2
Technical Datasheet
20 In Stock
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $3.870 |
| 10+ | $2.210 |
| 25+ | $2.180 |
| 50+ | $2.160 |
| 100+ | $2.140 |
| 250+ | $2.040 |
| 500+ | $1.950 |
Price for:Each
Minimum: 1
Multiple: 1
$3.87
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP28N60M2
Newark Part No.45AC7714
Product RangeMDmesh M2
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id22A
Drain Source On State Resistance0.135ohm
On Resistance Rds(on)0.135ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd170W
Gate Source Threshold Voltage Max3V
Power Dissipation170W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMDmesh M2
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.135ohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
MDmesh M2
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
22A
On Resistance Rds(on)
0.135ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
170W
Power Dissipation
170W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate