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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP2NK100ZCopy
Newark Part No.57P1925
Your Part Number
No Longer Available
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP2NK100ZCopy
Newark Part No.57P1925
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds1kV
Continuous Drain Current Id1.85A
Drain Source On State Resistance6.25ohm
On Resistance Rds(on)6.25ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd70W
Transistor Case StyleTO-220
Gate Source Threshold Voltage Max3.75V
Power Dissipation70W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Product Overview
The STP2NK100Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, specialties is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs.
- Extremely high dV/dt capability
- Very low intrinsic capacitance
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
1kV
Drain Source On State Resistance
6.25ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
70W
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
1.85A
On Resistance Rds(on)
6.25ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220
Power Dissipation
70W
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Legislation and Environmental
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
