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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP30NF10
Newark Part No.26M3688
Technical Datasheet
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP30NF10
Newark Part No.26M3688
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id35A
On Resistance Rds(on)0.045ohm
Drain Source On State Resistance0.045ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd115W
Gate Source Threshold Voltage Max3V
Power Dissipation115W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The STP30NF10 is a 100V N-channel Power MOSFET developed using unique "single feature size"™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
- Exceptional dv/dt capability
- 100% Avalanche tested
- Application oriented characterization
Applications
Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
35A
Drain Source On State Resistance
0.045ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
115W
Power Dissipation
115W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.045ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability