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STP34NM60ND
MOSFET, N CH, 600V, 29A, TO 220AB
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP34NM60NDCopy
Manufacturer Standard Lead Time45 weeks
Newark Part No.94T3478
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 45 week(s)
| Quantity | Price |
|---|---|
| 1+ | $12.040 |
| 10+ | $8.250 |
| 25+ | $8.190 |
| 50+ | $8.140 |
| 100+ | $8.090 |
| 250+ | $7.950 |
| 500+ | $7.800 |
Price for:Each
Minimum: 1
Multiple: 1
$12.04
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP34NM60NDCopy
Manufacturer Standard Lead Time45 weeks
Newark Part No.94T3478
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id29A
Drain Source On State Resistance0.097ohm
On Resistance Rds(on)0.097ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd210W
Gate Source Threshold Voltage Max4V
Power Dissipation210W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.097ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
29A
On Resistance Rds(on)
0.097ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
210W
Power Dissipation
210W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate