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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTW26NM60N
Newark Part No.94T3541
Technical Datasheet
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTW26NM60N
Newark Part No.94T3541
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id20A
Drain Source On State Resistance0.165ohm
On Resistance Rds(on)0.135ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Power Dissipation Pd140W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation140W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The STW26NM60N is a 600V N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
- 100% Avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.165ohm
Transistor Case Style
TO-247
Power Dissipation Pd
140W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
20A
On Resistance Rds(on)
0.135ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
140W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate