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STW58N65DM2AG
MOSFET, N-CH, 650V, 48A, TO247
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTW58N65DM2AG
Newark Part No.32AJ8927
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $12.240 |
Price for:Each
Minimum: 1
Multiple: 1
$12.24
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTW58N65DM2AG
Newark Part No.32AJ8927
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id48A
Drain Source On State Resistance0.058ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation360W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
48A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
360W
Operating Temperature Max
150°C
Qualification
AEC-Q101
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.058ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability