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2SK3799
Power MOSFET, N Channel, 900 V, 8 A, 1.3 ohm, TO-220SIS, Through Hole
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No Longer Available
Product Information
ManufacturerTOSHIBA
Manufacturer Part No2SK3799Copy
Newark Part No.25M1426
Channel TypeN Channel
Drain Source Voltage Vds900V
Continuous Drain Current Id8A
Drain Source On State Resistance1.3ohm
On Resistance Rds(on)1.3ohm
Transistor Case StyleTO-220SIS
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd50W
Gate Source Threshold Voltage Max4V
Power Dissipation50W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCTo Be Advised
Product Overview
The 2SK3799 is a N-channel enhancement-mode Silicon MOSFET suitable for switching regulator applications.
- Low drain-source ON resistance
- High forward transfer admittance
- Low leakage current
- Enhancement-mode
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
8A
On Resistance Rds(on)
1.3ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
50W
Power Dissipation
50W
Operating Temperature Max
150°C
Qualification
-
SVHC
To Be Advised
Drain Source Voltage Vds
900V
Drain Source On State Resistance
1.3ohm
Transistor Case Style
TO-220SIS
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Legislation and Environmental
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate