Print Page
TK6R8A08QM,S4X(S
Power MOSFET, N Channel, 80 V, 58 A, 0.0053 ohm, TO-220SIS, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTOSHIBA
Manufacturer Part NoTK6R8A08QM,S4X(S
Newark Part No.72AK4556
Product RangeU-MOSX-H Series
Technical Datasheet
1,120 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $2.040 |
| 10+ | $1.800 |
| 100+ | $1.530 |
| 500+ | $1.430 |
| 1000+ | $1.330 |
| 2500+ | $1.150 |
| 5000+ | $1.130 |
Price for:Each
Minimum: 1
Multiple: 1
$2.04
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTK6R8A08QM,S4X(S
Newark Part No.72AK4556
Product RangeU-MOSX-H Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id58A
Drain Source On State Resistance0.0053ohm
Transistor Case StyleTO-220SIS
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation41W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeU-MOSX-H Series
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
58A
Transistor Case Style
TO-220SIS
Rds(on) Test Voltage
10V
Power Dissipation
41W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0053ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.5V
No. of Pins
3Pins
Product Range
U-MOSX-H Series
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability