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TPWR8503NL,L1Q(M
Power MOSFET, N Channel, 30 V, 300 A, 0.00072 ohm, DSOP, Surface Mount
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|---|---|
| 1+ | $1.000 |
| 10+ | $1.000 |
| 25+ | $1.000 |
| 50+ | $1.000 |
| 100+ | $1.000 |
| 250+ | $1.000 |
| 500+ | $1.000 |
| 1000+ | $1.000 |
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTPWR8503NL,L1Q(M
Newark Part No.08AK7549
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id300A
Drain Source On State Resistance720µohm
On Resistance Rds(on)720µohm
Transistor Case StyleDSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.3V
Power Dissipation2.5W
Power Dissipation Pd2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
720µohm
Transistor Case Style
DSOP
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
No. of Pins
8Pins
Product Range
-
SVHC
To Be Advised
Channel Type
N Channel
Continuous Drain Current Id
300A
On Resistance Rds(on)
720µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.3V
Power Dissipation Pd
2.5W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate