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TW015N120C,S1F(S
Silicon Carbide MOSFET, Single, N Channel, 100 A, 1.2 kV, 0.02 ohm, TO-247
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 29 week(s)
| Quantity | Price |
|---|---|
| 1+ | $88.520 |
| 5+ | $86.920 |
| 10+ | $85.270 |
| 25+ | $84.430 |
| 60+ | $83.630 |
| 120+ | $80.350 |
Price for:Each
Minimum: 1
Multiple: 1
$88.52
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTW015N120C,S1F(S
Newark Part No.50AK7217
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id100A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.02ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5V
Power Dissipation431W
Operating Temperature Max175°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
100A
Drain Source On State Resistance
0.02ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
175°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
431W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability