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TW083U65C,RQ(S
Silicon Carbide MOSFET, Single, N Channel, 28 A, 650 V, 0.124 ohm, TOLL
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| Quantity | Price |
|---|---|
| 1+ | $17.040 |
| 10+ | $15.950 |
| 25+ | $14.990 |
| 50+ | $14.060 |
| 100+ | $13.120 |
| 250+ | $12.470 |
| 500+ | $11.920 |
| 1000+ | $11.490 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$17.04
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTW083U65C,RQ(SCopy
Newark Part No.49AM3032
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id28A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.124ohm
Transistor Case StyleTOLL
No. of Pins8Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5V
Power Dissipation111W
Operating Temperature Max175°C
Product Range-
SVHCLead
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
28A
Drain Source On State Resistance
0.124ohm
No. of Pins
8Pins
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
175°C
SVHC
Lead
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TOLL
Rds(on) Test Voltage
18V
Power Dissipation
111W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate