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IRF510PBF-BE3
Power MOSFET, N Channel, 100 V, 5.6 A, 0.54 ohm, TO-220AB, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $0.746 |
| 10+ | $0.689 |
| 25+ | $0.689 |
| 50+ | $0.640 |
| 100+ | $0.597 |
| 500+ | $0.574 |
| 1000+ | $0.544 |
| 2500+ | $0.527 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRF510PBF-BE3
Newark Part No.06AJ9154
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id5.6A
Drain Source On State Resistance0.54ohm
On Resistance Rds(on)0.54ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation Pd43W
Power Dissipation43W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.54ohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation Pd
43W
No. of Pins
3Pins
Qualification
-
SVHC
Lead
Channel Type
N Channel
Continuous Drain Current Id
5.6A
On Resistance Rds(on)
0.54ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation
43W
Operating Temperature Max
175°C
Product Range
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability