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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFP9140PBF
Newark Part No.19K8174
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id21A
Drain Source On State Resistance0.2ohm
On Resistance Rds(on)0.2ohm
Transistor MountingThrough Hole
Power Dissipation Pd180W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Transistor Case StyleTO-247
Power Dissipation180W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The IRFP9140PBF is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Easy to parallel
- Simple drive requirement
- Isolated central mounting hole
- Fast switching
- 175°C Operating temperature
Applications
Power Management, Commercial, Industrial
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.2ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Transistor Case Style
TO-247
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
P Channel
Continuous Drain Current Id
21A
On Resistance Rds(on)
0.2ohm
Power Dissipation Pd
180W
Gate Source Threshold Voltage Max
4V
Power Dissipation
180W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability