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IRL510PBF
Power MOSFET, N Channel, 100 V, 5.6 A, 0.54 ohm, TO-220AB, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $1.240 |
| 10+ | $1.110 |
| 25+ | $0.911 |
| 50+ | $0.904 |
| 100+ | $0.896 |
| 500+ | $0.871 |
| 1000+ | $0.787 |
| 2500+ | $0.731 |
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Multiple: 1
$1.24
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRL510PBF
Newark Part No.63J7799
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id5.6A
Drain Source On State Resistance0.54ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max2V
Power Dissipation43W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCTo Be Advised
Product Overview
The IRL510PBF is a 100V N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout the industry.
- Dynamic dv/dt rating
- Repetitive avalanche rated
- Logic-level gate drive
- Fast switching
- Ease of paralleling
- ±10V Gate to source voltage
- 3.5°C/W Thermal resistance, junction to case
- 62°C/W Thermal resistance, junction to ambient
Applications
Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5.6A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
5V
Power Dissipation
43W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.54ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Alternatives for IRL510PBF
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Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability