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ManufacturerVISHAY
Manufacturer Part NoSI1302DL-T1-E3Copy
Newark Part No.
Re-Reel65K1914RL
Cut Tape65K1914
Your Part Number
No Longer Available
Packaging Options
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1302DL-T1-E3Copy
Newark Part No.
Re-Reel65K1914RL
Cut Tape65K1914
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id640mA
On Resistance Rds(on)0.41ohm
Drain Source On State Resistance0.48ohm
Transistor MountingSurface Mount
Power Dissipation Pd310mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Transistor Case StyleSC-70
Power Dissipation310mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI1302DL-T1-E3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.41ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SC-70
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
640mA
Drain Source On State Resistance
0.48ohm
Power Dissipation Pd
310mW
Gate Source Threshold Voltage Max
3V
Power Dissipation
310mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
