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SI1308EDL-T1-GE3
MOSFET, N-CH, 30V, 1.4A, SC-70-3
Available to Order
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $0.655 | $3.28 |
| Total Price | $3.28 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $0.655 |
| 15+ | $0.422 |
| 25+ | $0.414 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.183 |
| 9000+ | $0.164 |
| 15000+ | $0.160 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1308EDL-T1-GE3Copy
Manufacturer Standard Lead Time16 weeks
Newark Part No.
Full Reel96AJ0100
Re-Reel62W0529RL
Cut Tape62W0529
Product RangeE
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id1.4A
On Resistance Rds(on)0.11ohm
Drain Source On State Resistance0.132ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Power Dissipation Pd500mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max600mV
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE
Qualification-
MSL-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.11ohm
Transistor Case Style
SOT-323
Power Dissipation Pd
500mW
Gate Source Threshold Voltage Max
600mV
No. of Pins
3Pins
Product Range
E
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
1.4A
Drain Source On State Resistance
0.132ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
500mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (1)
Alternatives for SI1308EDL-T1-GE3
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate