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SI1902CDL-T1-BE3
Dual MOSFET, N Channel, 20 V, 1.1 A, 0.195 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI1902CDL-T1-BE3
Newark Part No.36AJ8057
Product RangeTrenchFET Series
Technical Datasheet
2,970 In Stock
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1902CDL-T1-BE3
Newark Part No.36AJ8057
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id1.1A
Continuous Drain Current Id N Channel1.1A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.195ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSC-70
No. of Pins6Pins
Power Dissipation N Channel420mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
SVHCNo SVHC (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
1.1A
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
TrenchFET Series
SVHC
No SVHC (07-Nov-2024)
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
1.1A
Drain Source On State Resistance N Channel
0.195ohm
Transistor Case Style
SC-70
Power Dissipation N Channel
420mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability