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SI2307CDS-T1-BE3
Power MOSFET, P Channel, 30 V, 3.5 A, 0.088 ohm, SOT-23, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI2307CDS-T1-BE3
Newark Part No.82AH6201
Product RangeTrenchFET Si2307CDS Series
Technical Datasheet
Packaging Options
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2307CDS-T1-BE3
Newark Part No.82AH6201
Product RangeTrenchFET Si2307CDS Series
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id3.5A
On Resistance Rds(on)0.073ohm
Drain Source On State Resistance0.088ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation1.8W
Power Dissipation Pd1.8W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product RangeTrenchFET Si2307CDS Series
SVHCNo SVHC (07-Nov-2024)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.073ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
1.8W
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
3.5A
Drain Source On State Resistance
0.088ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
1.8W
Operating Temperature Max
150°C
Product Range
TrenchFET Si2307CDS Series
SVHC
No SVHC (07-Nov-2024)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability