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SI2371EDS-T1-BE3
Power MOSFET, P Channel, 30 V, 4.8 A, 0.045 ohm, TO-236, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI2371EDS-T1-BE3Copy
Manufacturer Standard Lead Time37 weeks
Newark Part No.42AJ0585
Product RangeTrenchFET Series
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2371EDS-T1-BE3Copy
Manufacturer Standard Lead Time37 weeks
Newark Part No.42AJ0585
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id4.8A
Drain Source On State Resistance0.045ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation1.7W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4.8A
Transistor Case Style
TO-236
Rds(on) Test Voltage
10V
Power Dissipation
1.7W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.045ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
TrenchFET Series
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability