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SI3474DV-T1-GE3
MOSFET, N CH, 100V, 3.8A, TSOP-6
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI3474DV-T1-GE3Copy
Manufacturer Standard Lead Time43 weeks
Newark Part No.40X8698
Your Part Number
5,915 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $0.827 |
| 10+ | $0.376 |
| 100+ | $0.331 |
| 500+ | $0.231 |
| 1000+ | $0.213 |
| 2500+ | $0.195 |
| 10000+ | $0.177 |
Price for:Each
Minimum: 1
Multiple: 1
$0.83
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3474DV-T1-GE3Copy
Manufacturer Standard Lead Time43 weeks
Newark Part No.40X8698
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id3.8A
On Resistance Rds(on)0.102ohm
Drain Source On State Resistance0.102ohm
Transistor Case StyleTSOP
Transistor MountingSurface Mount
Power Dissipation Pd3.6W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max-
Power Dissipation3.6W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.102ohm
Transistor Case Style
TSOP
Power Dissipation Pd
3.6W
Gate Source Threshold Voltage Max
-
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
3.8A
Drain Source On State Resistance
0.102ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
3.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate