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SI4174DY-T1-GE3
Power MOSFET, N Channel, 30 V, 17 A, 9500 µohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4174DY-T1-GE3Copy
Manufacturer Standard Lead Time16 weeks
Newark Part No.15AN1324
Product RangeTrenchFET Series
Your Part Number
2,500 In Stock
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| 5000+ | $0.545 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4174DY-T1-GE3Copy
Manufacturer Standard Lead Time16 weeks
Newark Part No.15AN1324
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id17A
Drain Source On State Resistance9500µohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
17A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
9500µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
TrenchFET Series
SVHC
To Be Advised
Technical Docs (1)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
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Product Compliance Certificate