Print Page
SI4214DDY-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 8.5 A, 8.5 A, 0.016 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4214DDY-T1-GE3Copy
Manufacturer Standard Lead Time36 weeks
Newark Part No.
Full Reel38AH2371
Re-Reel35R6236RL
Cut Tape35R6236
Product RangeTrenchFET Series
Your Part Number
1,295 In Stock
Need more?
FREE Standard Delivery
on orders over $150
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.899 | $0.90 |
| Total Price | $0.90 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.899 |
| 10+ | $0.564 |
| 25+ | $0.500 |
| 50+ | $0.435 |
| 100+ | $0.370 |
| 250+ | $0.328 |
| 500+ | $0.287 |
| 1000+ | $0.259 |
Full Reel
| Quantity | Price |
|---|---|
| 2500+ | $0.414 |
| 5000+ | $0.406 |
| 10000+ | $0.383 |
| 20000+ | $0.362 |
| 30000+ | $0.344 |
| 50000+ | $0.332 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4214DDY-T1-GE3Copy
Manufacturer Standard Lead Time36 weeks
Newark Part No.
Full Reel38AH2371
Re-Reel35R6236RL
Cut Tape35R6236
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id8.5A
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel8.5A
Continuous Drain Current Id P Channel8.5A
Drain Source On State Resistance N Channel0.016ohm
Drain Source On State Resistance P Channel0.016ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Qualification-
Product RangeTrenchFET Series
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SI4214DDY-T1-GE3 is a dual N-channel MOSFET housed in a surface-mount package. It is suitable for notebook system power and low current DC-to-DC converter applications.
- Halogen-free
- TrenchFET® power MOSFET
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
8.5A
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
8.5A
Drain Source On State Resistance P Channel
0.016ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds
30V
Continuous Drain Current Id N Channel
8.5A
Drain Source On State Resistance N Channel
0.016ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Product Range
TrenchFET Series
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Alternatives for SI4214DDY-T1-GE3
2 Products Found
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate