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SI4288DY-T1-GE3.
Dual MOSFET, Dual N Channel, 40 V, 9.2 A, 0.02 ohm
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Delivery estimated post order confirmations.You will be charged on dispatch.
| Quantity | Price |
|---|---|
| 2500+ | $0.847 |
| 7500+ | $0.830 |
| 12500+ | $0.813 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$2,117.50
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4288DY-T1-GE3.Copy
Newark Part No.30AC0152
Technical Datasheet
Channel TypeDual N Channel
Continuous Drain Current Id9.2A
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds40V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel9.2A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.02ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel-
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Channel Type
Dual N Channel
Drain Source Voltage Vds N Channel
40V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Qualification
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
9.2A
Drain Source Voltage Vds
40V
Continuous Drain Current Id N Channel
9.2A
Drain Source On State Resistance N Channel
0.02ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (3)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate