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Available to Order
Manufacturer Standard Lead Time: 16 week(s)
Quantity | Price |
---|---|
100+ | $1.410 |
Price for:Each (Supplied on Cut Tape)
Minimum: 2500
Multiple: 2500
$3,525.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4904DY-T1-GE3
Newark Part No.26R1894
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel40V
Continuous Drain Current Id8A
Drain Source Voltage Vds40V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel8A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.013ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel-
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI4904DY-T1-GE3 is a dual N-channel MOSFET housed in a surface-mount package. It is suitable for CCFL inverter applications.
- Halogen-free
- TrenchFET® power MOSFET
- 100% Rg and UIS tested
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
40V
Drain Source Voltage Vds
40V
Continuous Drain Current Id N Channel
8A
Drain Source On State Resistance N Channel
0.013ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate