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SIDR578EP-T1-RE3
MOSFET, N-CH, 150V, 78A, POWERPAK SO-DC ROHS COMPLIANT: YES
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ManufacturerVISHAY
Manufacturer Part NoSIDR578EP-T1-RE3
Newark Part No.47AK1666
Product RangeTrenchFET Gen V Series
Technical Datasheet
5,818 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $4.380 |
| 10+ | $3.250 |
| 25+ | $2.990 |
| 50+ | $2.740 |
| 100+ | $2.480 |
| 250+ | $2.390 |
| 500+ | $2.280 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$4.38
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIDR578EP-T1-RE3
Newark Part No.47AK1666
Product RangeTrenchFET Gen V Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id78A
On Resistance Rds(on)0.0073ohm
Drain Source On State Resistance8800µohm
Transistor Case StylePowerPAK SO-DC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation Pd150W
Power Dissipation150W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangeTrenchFET Gen V Series
Qualification-
Automotive Qualification Standard-
SVHCLead (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
150V
On Resistance Rds(on)
0.0073ohm
Transistor Case Style
PowerPAK SO-DC
Rds(on) Test Voltage
10V
Power Dissipation Pd
150W
No. of Pins
8Pins
Product Range
TrenchFET Gen V Series
Automotive Qualification Standard
-
SVHC
Lead (21-Jan-2025)
Channel Type
N Channel
Continuous Drain Current Id
78A
Drain Source On State Resistance
8800µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability