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SIHB12N65E-GE3
MOSFET, N CH, 650V, 12A, TO-263-3
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIHB12N65E-GE3Copy
Manufacturer Standard Lead Time6 weeks
Newark Part No.40X8669
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 6 week(s)
| Quantity | Price |
|---|---|
| 1+ | $4.100 |
| 10+ | $2.080 |
| 100+ | $1.890 |
| 500+ | $1.540 |
| 1000+ | $1.530 |
| 2500+ | $1.470 |
| 5000+ | $1.460 |
Price for:Each
Minimum: 1
Multiple: 1
$4.10
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHB12N65E-GE3Copy
Manufacturer Standard Lead Time6 weeks
Newark Part No.40X8669
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id12A
On Resistance Rds(on)0.33ohm
Drain Source On State Resistance0.38ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max-
Power Dissipation Pd156W
Power Dissipation156W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.33ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
156W
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
12A
Drain Source On State Resistance
0.38ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
-
Power Dissipation
156W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability