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SIHB23N60E-GE3
MOSFET, N CH, 600V, 23A, TO-263-3
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIHB23N60E-GE3Copy
Manufacturer Standard Lead Time6 weeks
Newark Part No.40X8671
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 6 week(s)
| Quantity | Price |
|---|---|
| 1+ | $5.410 |
| 10+ | $2.810 |
| 25+ | $2.730 |
| 50+ | $2.650 |
| 100+ | $2.580 |
| 250+ | $2.490 |
| 500+ | $2.420 |
Price for:Each
Minimum: 1
Multiple: 1
$5.41
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHB23N60E-GE3Copy
Manufacturer Standard Lead Time6 weeks
Newark Part No.40X8671
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id23A
Drain Source On State Resistance0.158ohm
On Resistance Rds(on)0.132ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd227W
Gate Source Threshold Voltage Max-
Power Dissipation227W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.158ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
-
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
23A
On Resistance Rds(on)
0.132ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
227W
Power Dissipation
227W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Alternatives for SIHB23N60E-GE3
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Associated Products
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate