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SIHB33N60E-GE3
Power MOSFET, N Channel, 600 V, 33 A, 0.099 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSIHB33N60E-GE3Copy
Manufacturer Standard Lead Time21 weeks
Newark Part No.68W7037
Your Part Number
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| Quantity | Price |
|---|---|
| 1+ | $8.320 |
| 10+ | $6.430 |
| 25+ | $6.030 |
| 50+ | $5.630 |
| 100+ | $5.230 |
| 250+ | $4.910 |
| 500+ | $4.580 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHB33N60E-GE3Copy
Manufacturer Standard Lead Time21 weeks
Newark Part No.68W7037
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id33A
Drain Source On State Resistance0.099ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation278W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
33A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
278W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.099ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
SVHC
Lead (04-Feb-2026)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
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