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| Quantity | Price |
|---|---|
| 1+ | $4.640 |
| 10+ | $4.140 |
| 25+ | $4.040 |
| 50+ | $3.930 |
| 100+ | $3.840 |
| 500+ | $3.600 |
| 1000+ | $3.220 |
Price for:Each
Minimum: 1
Multiple: 1
$4.64
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHG105N60EF-GE3
Newark Part No.77AH0223
Product RangeEF IV Gen
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id29A
On Resistance Rds(on)0.088ohm
Drain Source On State Resistance0.102ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation208W
Power Dissipation Pd208W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeEF IV Gen
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.088ohm
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
10V
Power Dissipation
208W
No. of Pins
3Pins
Product Range
EF IV Gen
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
29A
Drain Source On State Resistance
0.102ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
Power Dissipation Pd
208W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability