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Available to Order
Manufacturer Standard Lead Time: 31 week(s)
Quantity | Price |
---|---|
1+ | $6.680 |
10+ | $5.170 |
25+ | $5.090 |
50+ | $5.030 |
100+ | $4.960 |
500+ | $3.920 |
1000+ | $3.440 |
Price for:Each
Minimum: 1
Multiple: 1
$6.68
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHW21N80AE-GE3
Newark Part No.10AH0967
Product RangeE
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id17.4A
Drain Source On State Resistance0.235ohm
On Resistance Rds(on)0.205ohm
Transistor Case StyleTO-247AD
Transistor MountingThrough Hole
Power Dissipation Pd32W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation32W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
800V
Drain Source On State Resistance
0.235ohm
Transistor Case Style
TO-247AD
Power Dissipation Pd
32W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
E
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
17.4A
On Resistance Rds(on)
0.205ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
32W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability