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SIRB40DP-T1-GE3
DUAL MOSFET,N-CH, 40V, 40A, POWERPAK SO ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIRB40DP-T1-GE3Copy
Newark Part No.57AJ0395
Product RangeTrenchFET Gen IV Series
Your Part Number
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIRB40DP-T1-GE3Copy
Newark Part No.57AJ0395
Product RangeTrenchFET Gen IV Series
Channel TypeN Channel
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id40A
Continuous Drain Current Id N Channel40A
Continuous Drain Current Id P Channel40A
Drain Source On State Resistance N Channel2700µohm
Drain Source On State Resistance P Channel2700µohm
Transistor Case StylePowerPAK SO
No. of Pins8Pins
Power Dissipation N Channel46.2W
Power Dissipation P Channel46.2W
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
SVHCLead (04-Feb-2026)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
40V
Continuous Drain Current Id
40A
Continuous Drain Current Id P Channel
40A
Drain Source On State Resistance P Channel
2700µohm
No. of Pins
8Pins
Power Dissipation P Channel
46.2W
Product Range
TrenchFET Gen IV Series
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds N Channel
40V
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id N Channel
40A
Drain Source On State Resistance N Channel
2700µohm
Transistor Case Style
PowerPAK SO
Power Dissipation N Channel
46.2W
Operating Temperature Max
150°C
Qualification
-
Legislation and Environmental
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability