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SIS176LDN-T1-GE3
Power MOSFET, N Channel, 70 V, 42.3 A, 0.0109 ohm, PowerPAK 1212, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIS176LDN-T1-GE3Copy
Manufacturer Standard Lead Time53 weeks
Newark Part No.87AJ3414
Product RangeTrenchFET Gen IV Series
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIS176LDN-T1-GE3Copy
Manufacturer Standard Lead Time53 weeks
Newark Part No.87AJ3414
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds70V
Continuous Drain Current Id42.3A
Drain Source On State Resistance0.0109ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.6V
Power Dissipation39W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
SVHCLead (04-Feb-2026)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
42.3A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
4.5V
Power Dissipation
39W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
70V
Drain Source On State Resistance
0.0109ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV Series
SVHC
Lead (04-Feb-2026)
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
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